14 September 2018
NXP Semiconductors MMRF5017HS 125W 50V GaN RF Power Transistor offers Broadband operation from 30MHz to 2200MHz, and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, the MMRF5017HS is ideally suited for CW (Continuous Wave), Pulse, and Broadband RF applications.
- Advanced GaN (Gallium Nitride) on SiC (Silicon Carbide), offering high power density
- Input matched for extended wideband performance
- High ruggedness: >10:1 VSWR
- Frequency range: 30Mhz to 2200MHz
- Supply voltage: 50V
- P1dB: 51dBm, 125W typical
- Efficiency: 59.1%
- Thermal resistance: 1.3ºC/W
- NI-400S-2S Package
- RoHS compliant
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