Ürün Özellikleri Listesi
Ürün Özellikleri	Özellik İçeriği	Tümü
Manufacturer	IXYS	Manufacturer
Series	TrenchP™	Series
Technology	MOSFET (Metal Oxide)	Technology
FET Type	P-Channel	FET Type
Drain to Source Voltage (Vdss)	100V	Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C	140A (Tc)	Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)	568W (Tc)	Power Dissipation (Max)
Rds On (Max) @ Id, Vgs	12 mOhm @ 70A, 10V	Rds On (Max) @ Id, Vgs
Vgs (Max)	±15V	Vgs (Max)
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs	400nC @ 10V	Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds	31400pF @ 25V	Input Capacitance (Ciss) (Max) @ Vds
Operating Temperature	-55°C ~ 150°C (TJ)	Operating Temperature
Mounting Type	Through Hole	Mounting Type
Package / Case	TO-247-3	Package / Case
Packaging	Tube	Packaging
Supplier Device Package	TO-247 (IXTH)	Supplier Device Package
Drive Voltage (Max Rds On, Min Rds On)	10V	Drive Voltage (Max Rds On, Min Rds On)
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