Ürün Özellikleri Listesi
Ürün Özellikleri	Özellik İçeriği	Tümü
Manufacturer	Toshiba Semiconductor and Storage	Manufacturer
FET Type	N and P-Channel	FET Type
FET Feature	Logic Level Gate, 1.8V Drive	FET Feature
Drain to Source Voltage (Vdss)	20V	Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C	800mA	Current - Continuous Drain (Id) @ 25°C
Power - Max	500mW	Power - Max
Rds On (Max) @ Id, Vgs	143 mOhm @ 600MA, 4V	Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id	1V @ 1mA	Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs	-	Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds	268pF @ 10V	Input Capacitance (Ciss) (Max) @ Vds
Operating Temperature	150°C (TJ)	Operating Temperature
Mounting Type	Surface Mount	Mounting Type
Package / Case	6-SMD	Package / Case
Packaging	Tape & Reel (TR)	Packaging
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