Megasan Elektronik-MOSFET SI3481DV P-Ch 30V 4A (Ta) SOT-23-6 Thin, TSOT-23-6 T&R Vishay

ÜRETİCİ KODU

SI3481DV-T1-E3
MARKA

Vishay Siliconix
ÜRÜN GRUBU

Transistörler - FETler, MOSFETler - Tekli
SİPARİŞ KODU
Sipariş kodunu panoya kopyala
FET3295X0012
ÜRÜN ADI
Ürün adını panoya kopyala
MOSFET SI3481DV P-Ch 30V 4A (Ta) SOT-23-6 Thin, TSOT-23-6 T&R Vishay

Ürün Özellikleri Listesi
Ürün Özellikleri	Özellik İçeriği	Tümü
Manufacturer	Vishay Siliconix	Manufacturer
Series	TrenchFET®	Series
Part Status	Obsolete	Part Status
Technology	MOSFET (Metal Oxide)	Technology
FET Type	P-Channel	FET Type
Drain to Source Voltage (Vdss)	30V	Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)	Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)	1.14W (Ta)	Power Dissipation (Max)
Rds On (Max) @ Id, Vgs	48 mOhm @ 5.3A, 10V	Rds On (Max) @ Id, Vgs
Vgs (Max)	±20V	Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id	3V @ 250µA	Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V	Gate Charge (Qg) (Max) @ Vgs
Operating Temperature	-55°C ~ 150°C (TJ)	Operating Temperature
Mounting Type	Surface Mount	Mounting Type
Package / Case	SOT-23-6 Thin, TSOT-23-6	Package / Case
Packaging	Tape & Reel (TR)	Packaging
Supplier Device Package	6-TSOP	Supplier Device Package
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drive Voltage (Max Rds On, Min Rds On)
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