Manufacturer

Vishay Siliconix

Series

Part Status

Active

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

FET Feature

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Power Dissipation (Max)

125W (Tc)

Rds On (Max) @ Id, Vgs

550 mOhm @ 6A, 10V

Vgs (Max)

±20V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Packaging

Tube

Supplier Device Package

TO-220AB

Drive Voltage (Max Rds On, Min Rds On)

Manufacturer

Fairchild/ON Semiconductor

Series

Part Status

Active

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

FET Feature

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Power Dissipation (Max)

38W (Tc)

Rds On (Max) @ Id, Vgs

750 mOhm @ 5A, 10V

Vgs (Max)

±25V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1475pF @ 25V

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Packaging

Tape & Reel (TR)

Supplier Device Package

TO-220F

Drive Voltage (Max Rds On, Min Rds On)

Manufacturer

Cree/Wolfspeed

Series

Z-FET™

Part Status

Technology

SiCFET (Silicon Carbide)

FET Type

N-Channel

FET Feature

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Power Dissipation (Max)

62.5W (Tc)

Rds On (Max) @ Id, Vgs

370 mOhm @ 6A, 20V

Vgs (Max)

+25V, -10V

Drive Voltage (Max Rds On, Min Rds On)

20V

Vgs(th) (Max) @ Id

2.8V @ 1.25mA (Typ)

Gate Charge (Qg) (Max) @ Vgs

20.4nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds

259pF @ 1000V

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Packaging

Tube

Supplier Device Package

TO-247-3

Drive Voltage (Max Rds On, Min Rds On)

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

Part Status

Active

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

FET Feature

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Power Dissipation (Max)

380W (Tc)

Rds On (Max) @ Id, Vgs

1.4 Ohm @ 5A, 10V

Vgs (Max)

±30V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

3030pF @ 25V

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Packaging

Tube

Supplier Device Package

TO-247AD (IXFH)

Drive Voltage (Max Rds On, Min Rds On)

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

Part Status

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

FET Feature

-

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Power Dissipation (Max)

22.7W (Tc)

Rds On (Max) @ Id, Vgs

Vgs (Max)

±16V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

3.5V @ 120µA

Gate Charge (Qg) (Max) @ Vgs

13.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Packaging

Tube

Supplier Device Package

PG-TO220 Full Pack

Drive Voltage (Max Rds On, Min Rds On)

Manufacturer

ON Semiconductor

Series

Part Status

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

FET Feature

-

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Rds On (Max) @ Id, Vgs

210 mOhm @ 5A, 10V

Vgs (Max)

±25V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

715pF @ 25V

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging

Tape & Reel (TR)

Supplier Device Package

Drive Voltage (Max Rds On, Min Rds On)

10V

Manufacturer

STMicroelectronics

Series

Part Status

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

FET Feature

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Power Dissipation (Max)

103W (Tc)

Rds On (Max) @ Id, Vgs

330 mOhm @ 5A, 10V

Vgs (Max)

±20V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

780pF @ 25V

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging

Tape & Reel (TR)

Supplier Device Package

Drive Voltage (Max Rds On, Min Rds On)

10V