Manufacturer

Infineon Technologies

Series

HEXFET®

Part Status

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

FET Feature

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Power Dissipation (Max)

43W (Tc)

Rds On (Max) @ Id, Vgs

600 mOhm @ 2.9A, 10V

Vgs (Max)

±20V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging

Tape & Reel (TR)

Supplier Device Package

Drive Voltage (Max Rds On, Min Rds On)

Manufacturer

Vishay Siliconix

Series

-

Part Status

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

FET Feature

-

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

5.6A (Tc)

Power Dissipation (Max)

43W (Tc)

Rds On (Max) @ Id, Vgs

540 mOhm @ 3.4A, 10V

Vgs (Max)

±20V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

180pF @ 25V

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Packaging

Tube

Supplier Device Package

TO-220AB

Drive Voltage (Max Rds On, Min Rds On)