ATP113-TL-H Hakkında

Picture of MOSFET ATP113 P-CH 60V 35A  ATPAK
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Product Features Özellik İçeriği
Manufacturer ON Semiconductor
Technology MOSFET (Metal Oxide)
FET Type P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 35A (Ta)
Power Dissipation (Max) 50W (Tc)
Rds On (Max) @ Id, Vgs 29.5 mOhm @ 18A, 10V
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 20V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case ATPAK (2 leads+tab)
Packaging Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
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