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Picture of MOSFET AUTO 55V 1 N-CH HEXFET Infineon
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Ürün Özellikleri Listesi
Product Features Özellik İçeriği
Manufacturer Infineon Technologies
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 60A
Power Dissipation (Max) 110W (Tc)
Rds On (Max) @ Id, Vgs 20 mOhm @ 30A, 5V
Vgs (Max) ±16V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
Operating Temperature -55°C ~ 175°C
Mounting Type Surface Mount
Package / Case D-Pak
Packaging Tape & Reel (TR)
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