BSH103,215 Hakkında

Picture of MOSFET BSH103 N-Ch 30V 850mA (Ta) TO-236-3, SC-59, SOT-23-3 T&R NXP
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Product Features Özellik İçeriği
Manufacturer NXP USA Inc.
Part Status Active
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 850mA (Ta)
Power Dissipation (Max) 540mW (Ta)
Rds On (Max) @ Id, Vgs 400 mOhm @ 500mA, 4.5V
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V
Vgs(th) (Max) @ Id 400mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 83pF @ 24V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Supplier Device Package TO-236AB (SOT23)
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