FQPF8N80C Hakkında

Picture of MOSFET FQPF8N80C N-CH 800V 8A
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Product Features Özellik İçeriği
Manufacturer ON Semiconductor
Series QFET®
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Power Dissipation (Max) 59W (Tc)
Rds On (Max) @ Id, Vgs 1.55 Ohm @ 4A, 10V
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 25V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Packaging Tube
Supplier Device Package TO-220F
Drive Voltage (Max Rds On, Min Rds On) 10V
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