IRF640NSPBF Hakkında

Picture of MOSFET IRF640NS N-Ch 200V 18A (Tc) TO-263-3 T&R IR
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Product Features Özellik İçeriği
Manufacturer International Rectifier Corporation
Part Status Not For New Designs
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id, Vgs 150 mOhm @ 11A, 10V
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Supplier Device Package D2PAK
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Price: $1.9325