IXTP5N50P Hakkında

Picture of MOSFET IXTP5N50P N-Ch 500V 4.8A (Tc) TO-220-3 Tube IXYS
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Product Features Özellik İçeriği
Manufacturer IXYS Integrated Circuits Division
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Power Dissipation (Max) 89W (Tc)
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 2.4A, 10V
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 12.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Packaging Tube
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