IRF1310NPBF Hakkında

Picture of MOSFET N-CH 100V 42A TO-220AB
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Product Features Özellik İçeriği
Manufacturer Infineon Technologies
Series HEXFET®
Technology MOSFET (Metal Oxide)
FET Type N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Power Dissipation (Max) 160W (Tc)
Rds On (Max) @ Id, Vgs 36 mOhm @ 22A, 10V
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Packaging Tube
Supplier Device Package TO-220AB
Drive Voltage (Max Rds On, Min Rds On) 10V
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