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Picture of MOSFET N-CH 100V 8A TO-39 TT
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Ürün Özellikleri Listesi
Product Features Özellik İçeriği
Manufacturer TT Electronics
Technology MOSFET (Metal Oxide)
FET Type N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.2A (Tc)
Power Dissipation (Max) 20.833W
Rds On (Max) @ Id, Vgs 180 mOhm @ 5A, 10V
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AF Metal Can
Packaging Bulk
Drive Voltage (Max Rds On, Min Rds On) 10V
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