SISA40DN-T1-GE3 Hakkında

Picture of MOSFET N-CH 20V 43.7A PPAK 1212-8 T&R Vishay
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Product Features Özellik İçeriği
Manufacturer Vishay Siliconix
Technology MOSFET (Metal Oxide)
FET Type N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 43.7A (Ta), 162A (Tc)
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs 1.1mOhm @ 10A, 10V
Vgs (Max) +12V, -8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3415pF @ 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Packaging Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
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