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Picture of MOSFET N-CH 20V 4A SOT-23 T&R JieJie
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Product Features Özellik İçeriği
Manufacturer Jiangsu JieJie Microelectronics
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Power Dissipation (Max) 960mW
Rds On (Max) @ Id, Vgs 58 mOhm @ 3.1A, 2.5V
Vgs (Max) ±10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Operating Temperature -55°C ~ 150°C
Mounting Type Surface Mount
Package / Case SOT-23
Packaging Tape & Reel (TR)
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