FDD4N60NZ Hakkında

Picture of MOSFET N CH 600V 3.4A DPAK
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Product Features Özellik İçeriği
Manufacturer ON Semiconductor
Series UniFET-II™
Technology MOSFET (Metal Oxide)
FET Type N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3.4A (Tc)
Power Dissipation (Max) 114W (Tc)
Rds On (Max) @ Id, Vgs 2.5 Ohm @ 1.7A, 10V
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Supplier Device Package DPAK
Drive Voltage (Max Rds On, Min Rds On) 10V
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