SIR626LDP-T1-RE3 Hakkında

Picture of MOSFET SIR626 N-CH 60V 45.6A/186A PPAK
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Product Features Özellik İçeriği
Manufacturer Vishay Siliconix
Technology MOSFET (Metal Oxide)
FET Type N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 45.6A (Ta), 186A (Tc)
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs 1.5 mOhm @ 20A, 10V
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5900pF @ 30V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Packaging Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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